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 GP1S93
GP1S93
s Features
1. Low height type (Height : 3.1 mm) 2. Wide gap type (Gap : 2.0 mm)
Subminiature Photointerrupter
s Outline Dimensions
(Unit : mm)
a
3. Detector side slit width : (0.3) mm
Top View
Internal connection diagram
2
1 4
(0.85)
1. FDDs 2. Cameras 3. Camera-integral VCRs
2.3
a
s Applications
3
1 2 3 4
Anode Collector Emitter Cathode
4.5 2.0 (C0.4) 3.1 3.4
a-a section (0.3) Slit width
Optical center
(C0.3)
S
3.6 0.5
4Z
0.4
g 3.55
0.15 - 0.1
+ 0.2
g 2.54
3
4
2
1
* Tolerance : 0.2 * ( ) : Reference dimensions * The dimensions indicated by g refer to those measured from the lead base.
s Absolute Maximum Ratings
Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Tsol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260
(Ta=25C) Unit mA V mW V V mA mW mW C C C
Input
Output
1mm or more
Soldering area
*1 For 5 seconds
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
GP1S93
s Electro-optical Characteristics
Parameter Forward voltage Reverse current Dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V IF = 5mA, V CE = 5V IF = 10mA, I C = 40 A IC = 0.1mA, VCE = 5V, R L = 1k MIN. 100 TYP. 1.2 50 50 MAX. 1.4 10 1 x 10 - 7 400 0.4 150 150 (Ta=25C) Unit V A A A V s s
Input Output Transfer characteristics
Fig. 1 Forward Current vs. Ambient Temperature
60
Fig. 2 Power Dissipation vs. Ambient Temperature
120
Total power dissipation
50
100
Power dissipation P (mW)
Forward current I F (mA)
Input side power dissipation and
40
80 output side collector power dissipation
30
60
20
40
10
20
0 - 25
0
25
50
75 85
100
0 - 25
0
25
50
75 85
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig. 3 Forward Current vs. Forward Voltage
500 200 T a= 75C 50C 25C 0C -25C
Fig. 4 Collector Current vs. Forward Current
VCE =5V Ta =25C
1.0
Forward current I F (mA)
100 50 20 10 5 2 1 0 0.5 1 1.5 2
Collector current I C (mA)
0.8
0.6
0.4
0.2
2.5
3
0 0
4
8
12
16
20
Forward voltage V F (V)
Forward current IF (mA)
GP1S93
Fig. 5 Collector Current vs. Collector-emitter Voltage
2.0
Fig. 6 Relative Collector Current vs. Ambient Temperature
120 110
Ta =25C
IF=50mA
IF=5mA VCE=5V
Relative collector current (%)
10
40mA
100 90 80 70 60 50 40 30 20 10 0 - 25
(mA)
1.6
Collector current I
C
30mA
1.2
20mA
0.8
10mA
0.4
5mA
0 0 5
0
25
50
75 85
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C)
Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature
Collector-emitter saturation voltage V CE(sat) (V)
0.20 0.18 0.16
Fig. 8 Dark Current vs. Ambient Temperature
10
-6
IF =10mA IC =40 A
5 2 10
-7
VCE= 20V
Dark current I CEO (A)
5 2 10
-8
0.14 0.12 0.10 0.08 0.06
5 2 10
-9
5 2
0.04 - 25
0
25
50
75 85
10
- 10
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig. 9 Response Time vs. Load Resistance
1000
Test Circuit for Response Time
VCE =5V 500 IC =100 A
tr tf
VCC Input RD RL Output
Input 10% 90%
Response time (s)
100 50
td ts
Output td tr ts tf
10 5
1 0.1
1
5
10
50 100
Load resistance R L (k )
GP1S93
Fig. 10 Detecting Position Characteristics (1)
100 90 IF =5mA VCE =5V
L=0 L
Fig. 11 Detecting Position Characteristics (2)
100 90 IF =5mA VCE =5V
L L=0
Relative collector current (%)
Relative collector current (%)
0.5 1 1.5 2 2.5
80 70 60 50 40 30 20 10 0 0
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5
2
Shield distance L (mm)
Shield distance L (mm)
q Please refer to the chapter "Precautions for Use".


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